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BTS3160D 10mohm smart low side power switch datasheet, rev. 1.1, february 2008 automotive power
datasheet 2 rev. 1.1, 2008-02-28 smart low side power switch hitfet - BTS3160D table of contents table of contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 1 overview . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 block diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 2.1 voltage and current naming definition . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 3 pin configuration . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 3.1 pin assignment BTS3160D . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 3.2 pin definitions and functions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 4 general product characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 4.1 absolute maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 4.2 functional range . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 4.3 thermal resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 5 supply and input stage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 5.1 supply circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 5.1.1 under voltage lock out / po wer on reset . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 5.2 input circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 5.2.1 readout of fault information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 5.3 electrical characteristics supply and input stages . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 6power stage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 6.1 output on-state resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 6.2 output timing and slopes . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17 6.3 inductive output clamp . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18 6.4 electrical characteristics power stage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20 7 protection functions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22 7.1 thermal protection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22 7.2 over voltage protection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22 7.3 short circuit protection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22 7.4 electrical characteristics protection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25 8 application information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26 8.1 dimensioning of serial resistor at in pin . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26 8.2 further application informat ion . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27 9 package outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 28 10 revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 29 table of contents
pg-to-252-5-13 type package BTS3160D pg-to-252-5-13 datasheet 3 rev. 1.1, 2008-02-28 smart low side power switch hitfet - BTS3160D BTS3160D 1overview the BTS3160D is a one channel low-side power switch in v bb line, down to 6 v ? very low over all leakage current ? providing digital fault information ? electrostatic discha rge protection (esd) ? green product (rohs compliant) ? aec qualified table 1 basic electrical data drain voltage v d 40 v supply voltage v s 6.0 ? 45 v on-state resistance at 25c r ds(on,max) 10 m ? i dnom 7.8 a maximum inrush current i dsc 70 a leakage current mosfet at v bb = 13.5 v, t j = 85 i dss 2 v bb = 13.5 v, t j = 85 i sss 4 e as 0.3 j
datasheet 4 rev. 1.1, 2008-02-28 smart low side power switch hitfet - BTS3160D overview digital diagnostic ? over temperature shutdown ? over load shutdown ? short circuit shutdown protection functions ? electrostatic discharge (esd) ? under voltage lock out ? over temperature (shutdown with latch) ? over voltage (active clamped) application ? micro controller compatible low side power switch with digital feedback for 12v loads ? all types of resistive, in ductive and capacitive loads ? suitable for loads with high in rush current, such as lamps ? also suitable for leds because of low leakage current ? replaces electromechanical relays, fuses and discrete circuits description the BTS3160D is a latching one channel low-side power switch in pg-to-252-5-13 package providing embedded protective functions. the powe r transistor is build by a n-channel vertic al power mosfet. the device is controlled by a control chip in smart power technology. the device is able to switch all kind of resistive, inductive and capacitive loads. for lamp loads the lamp-inrush- current, eight- to ten-times the nominal current, has to be considered. the maximal inrush current has to be below the minimum short circuit shutdown current. the esd protection of the v s and in/fault pin is in relation to gnd. the BTS3160D is supplied by the v s pin. this pin can be connected to battery line. the supply voltage is monitored by the under voltage lock out circuit. the gate dr iving unit allows to operate the device in the low ohmic range even with 3.3 v input signal. for pwm application the device offers smooth turn-on and off due to the embedded edge shaping function, in order to reduce emc noise. the over voltage protection is for protection during load- dump or inductive turn off conditions. the power mosfet is limiting the drain-source voltage, if it gets too high. this fu nction is available even without supply. the over temperature protection is in order to save the device from overheating due to overload and bad cooling conditions. in order to reduce the device stress the edge shaping is disabled during thermal shutdown. after thermal shutdown the device stays off until the latch is reset by a in-low signal. for high dynamic overload conditions such as short circuit the device will turn off if a certain load current is reached. the short circuit shutdown is a latch function. the device will stay off until the latch is reset by in-low signal. in order to reduce the device stress the edge shaping is dis abled during short circuit turn off.
datasheet 5 rev. 1.1, 2008-02-28 smart low side power switch hitfet - BTS3160D block diagram 2 block diagram drain gnd gate driving unit over- voltage protection in / fault under voltage lockout v s esd protection error logic blockdiagram.emf over- temperature protection short circuit protection ?
datasheet 6 rev. 1.1, 2008-02-28 smart low side power switch hitfet - BTS3160D block diagram 2.1 voltage and curren t naming definition following figure shows all the terms us ed in this data sheet, with associated convention for positive values. terms .emf v in v d gnd i gnd drain v bb r l in / fault v s i d i in i s v bb gnd v s figure 2 terms
datasheet 7 rev. 1.1, 2008-02-28 smart low side power switch hitfet - BTS3160D pin configuration 3 pin configuration 3.1 pin assignment BTS3160D drain (top view) gnd 5 6 (tab) 4 3 2 1 gnd in / fault v s pinconfiguration.emf figure 3 pin configuration pg-to-252-5-13 3.2 pin definitions and functions pin symbol function 1 v s supply voltage; connected to battery voltage with reverse polarity protection 2 in control input and status feedback; digital input 3.3 v or 5 v logic. 3, tab drain drain output; protected low side power output channel 4,5 gnd ground; signal ground, pin 4 and 5 must be externally shorted 1) not shorting pin 4 and 5 will considerably increase the on- state resistance and reduce the peak current capability. 1)
datasheet 8 rev. 1.1, 2008-02-28 smart low side power switch hitfet - BTS3160D general product characteristics 4 general product characteristics 4.1 absolute maximum ratings t j = -40 v s = 6 v to 30 v. all voltages with respect to ground, positive current flowing into pin (unless otherwise specified) pos. parameter symbol limit values unit conditions min. max. supply voltage v s -0.3 30 v ? supply voltage during active clamping v s(pulse) -0.3 45 v 2) not for dc operation, only for short pulse (i.e. loaddump) for a total of 100 h in full device life. drain voltage v d -0.3 40 v 3) active clamped. drain voltage for short circuit protection v d(sc) 0 30 v ? logic input voltage v in -0.3 5.3 v ? unclamped single pulse inductive energy e as 0 0.3 j i d = 20 a; v bb = 30 v t j(start) = 150 v loaddump = v a + v s v ld 0 45 v t j = 25 t j -40 150 t stg -55 150 v esd -4 4 kv 4) esd susceptibility, hbm acco rding to eia/jesd 22-a114b hbm 4) 3) 2) note: stresses above the ones listed here may cause perm anent damage to the device. exposure to absolute maximum rating conditions for extended periods may affect device reliability. note: integrated protection functions are designed to prevent ic destruction under fault conditions described in the data sheet. fault conditions are considered as ?outside? normal operating range. protection functions are not designed for continuous repetitive operation. absolute maximum ratings 1) 1) not subject to production test, specified by design. voltages 4.1.1 4.1.2 4.1.3 4.1.4 4.1.5 energies 4.1.6 4.1.7 temperatures 4.1.8 4.1.9 esd susceptibility 4.1.10
datasheet 9 rev. 1.1, 2008-02-28 smart low side power switch hitfet - BTS3160D general product characteristics 4.2 functional range pos. parameter symbol limit values unit conditions min. typ. max. supply voltage v s 6 13.5 30 v ? supply current in off mode i s(off) ? 1.5 ? v in = 0.0 v; v s = 13.5 v; t j = 25 v in = 0.0 v; v s = 13.5 v; t j = 85 v in = 0.0 v; v s = 13.5 v; t j = 150 i s ? 1.6 3 ma v in = 5.0 v; v s = 30 v note: within the functional range the ic operates as de scribed in the circuit description. the electrical characteristics are specifi ed within the conditions given in the re lated electrical ch aracteristics table. 4.3 thermal resistance pos. parameter symbol limit values unit conditions min. typ. max. junction to case r thjc ? 0.9 1.1 k/w 1) not subject to production test, specified by design junction to ambient r thja ? 80 k/w 1) @min. footprint ? 45 k/w 1) @ 6 cm2 cooling area, see figure 4 1) 4.2.1 4.2.2 4.2.3 4.3.1 4.3.2
z thja 10 -3 10 -2 10 -1 s 10 -1 10 -6 k/w 10 -5 10 -4 t p zth.emf 10 2 110 1 10 3 10 2 10 1 1 d = 0.5 d = 0.2 d = 0.1 d = 0.05 d = 0.02 d = 0.01 single pulse datasheet 10 rev. 1.1, 2008-02-28 smart low side power switch hitfet - BTS3160D general product characteristics figure 4 typical transient thermal impedance
datasheet 11 rev. 1.1, 2008-02-28 smart low side power switch hitfet - BTS3160D supply and input stage 5 supply and input stage 5.1 supply circuit the supply pin v s is protected against esd pulses as shown in figure 5 . due to an internal voltage regulator the device can be supplied from battery line. supply.emf 6.0v ...30 v gnd v s z d regulator figure 5 supply circuit 5.1.1 under voltage lock out / power on reset in order to ensure a stable device behavior und er all allowed conditio ns the supply voltage v s is monitored by the under voltage lock out circuit. all device functions and prot ection are given for supply voltages above under voltage lockout v suvon but parameter deviations are possible below v s(min) . there is no failure feedback for v s < v suvon . uvlo_hysteresis.emf v suvon v suvoff functional off device v s figure 6 under voltage lock out
datasheet 12 rev. 1.1, 2008-02-28 smart low side power switch hitfet - BTS3160D supply and input stage 5.2 input circuit figure 7 shows the input circuit of the BTS3160D. it?s ensured that the device switches o ff in case of open input pin. a zener structure protects the input circuit against esd pulses. as the BTS3160D has a supply pin, the operation of the power mos can be maintained regardless of the voltage on the in pin, therefore a digital status feedback down to logic low is realized. for read out of the fault information, please refer to ?readout of fault information? on page 12 input.emf gnd in/fault 1.0ma : 3.0ma 20a : 100a figure 7 input circuit 5.2.1 readout of fault information the BTS3160D provides digital status info rmation via an increased current on the in / fault pin. i in(fault) is an order of magnitude above the normal operation current i in(nom) therefore the voltage at the in/fault pin will decrease. the voltage at the pin is determined by the current and the serial resistor. we recommend 3k3 for a 3.3v c and 5k6 for a 5v c to achieve a logic low signal. for detailed calculation please refer to ?dimensioning of serial resistor at in pin? on page 26 in/fault fault_readout.emf BTS3160D micro controller v cc v s gnd gnd do di v di i do i in r1 v cc gnd v bb figure 8 readout of fault information
datasheet 13 rev. 1.1, 2008-02-28 smart low side power switch hitfet - BTS3160D supply and input stage 5.3 electrical characteristi cs supply and input stages v s = 6 v to 30 v, t j = -40 v suvon ? ? 5.5 v v s = 5.5 v uv-switch-off voltage v suvoff 4.0 ? ? v v s = 4.0 v uv-switch-off hysteresis v suvhy ? 0.2 ? v v suvon - v suvoff low level voltage v inl ? ? 0.8 v v s = 6 v; v inh 2.0 ? ? v v s = 6 v; i in 20 50 100 v in = 5.3 v; i in-fault 1 2 3 ma v in = 5.3 v; i fault_onth 600 ua 1) not subject to production test 1) under voltage lockout 5.3.1 5.3.2 5.3.3 digital input / fault feedback 5.3.4 5.3.5 5.3.6 5.3.7
datasheet 14 rev. 1.1, 2008-02-28 smart low side power switch hitfet - BTS3160D power stage 6 power stage the power stage is built by a n-chann el vertical power mosfet (dmos) 6.1 output on-state resistance the on-state resistance depends on the supply voltage as well as on the junction temperature t j . figure 9 shows the dependency over temperature fo r the typical on-state resistance r ds(on) ,while figure 10 shows the dependency over vs. 4,00 6,00 8,00 10,00 12,00 14,00 16,00 -40 -15 10 35 60 85 110 135 typ. rdson_tj.emf t [ c ] r ds(on) [ m ? ]
5,00 10,00 15,00 20,00 25,00 30,00 35,00 40,00 45,00 50,00 0 102030 r ds(on) [m ?] ] r dson = f( v s ) 0 10 20 30 40 50 60 70 00,511,5 i d [a] v ds [v] v s = 10v v s = 6v outputchar.emf & v s = 30v typ. figure 11 typical output characteristics, t jstart = 25 v s
0,00 2,00 4,00 6,00 -50 -25 0 25 50 75 100 125 150 175 tj [c] idss [a] t j [c] typ. i dss [a] zeroindrain .em f datasheet 16 rev. 1.1, 2008-02-28 smart low side power switch hitfet - BTS3160D power stage figure 12 typical zero input voltage drain current, i dss = f( t j )
datasheet 17 rev. 1.1, 2008-02-28 smart low side power switch hitfet - BTS3160D power stage 6.2 output timing and slopes a high signal on the input pin causes the power mosfet to switch on with a dedicate d slope which is optimized for low emc emission. figure 13 shows the timing definition. in low high t on t off t v d v bb 60 % 40 % -dv d / dt on dv d / dt off outputtiming.emf t t ond 10 % 90 % t o ffd figure 13 switching a resistive load in order to minimize the emission during switching the bt s3160d limits the slopes during turn on- and off to slow slew rate settings. the definition is shown in figure 14 . for best performance of the edge shaping the supply pin v s should be connected to battery voltage . for supply voltages other than nomina l battery the edge shaping can differ from the values in the electrical characteristics table below. in low high t i d 20 % |di/dt|slow edgeshaping.emf t 80 % 100 % |di/dt|slow |di/dt|fast figure 14 typical slopes for resistive loads
datasheet 18 rev. 1.1, 2008-02-28 smart low side power switch hitfet - BTS3160D power stage 6.3 inductive output clamp when switching off inductive loads with lo w-side switches, the drain source voltage v d rises above battery potential, because the inductance intends to continue driving the current. the BTS3160D is equipped with a voltage clamp mechanism that keeps the drain-source voltage v d at a certain level. see figure 15 for more details. outputclamp.emf gnd drain figure 15 output clamp inductiveload.emf in low high t t von v bb t i d v daz overtemperature or short circuit detected figure 16 switching an inductance while demagnetization of inductive loads, energy has to be dissipated in the BTS3160D. this energy can be calculated with following equation: ev ds(cl) v bb v ? ds(cl) r l ---------------------------------- - ln 1 r l i l v bb v ? ds(cl) ---------------------------------- - ? ?? ?? ?? i l + l r l ------ = following equation simplifies under assumption of r l = 0 e 1 2 -- - li l 2 1 v bb v bb v ? ds(cl) ---------------------------------- - ? ?? ?? ?? =
datasheet 19 rev. 1.1, 2008-02-28 smart low side power switch hitfet - BTS3160D power stage figure 17 shows the inductance / current combination the BTS3160D can handle. for maximum single avalanche energy please also refer to e as value in ?energies? on page 8 0,0 0,1 1,0 10,0 10 100 i d [a] l [mh] eas.emf max. v bb = 30v figure 17 maximum load inductance for single pulse f
datasheet 20 rev. 1.1, 2008-02-28 smart low side power switch hitfet - BTS3160D power stage 6.4 electrical charact eristics power stage v s = 6 v to 30 v, t j = -40 c to +150 c all voltages with respect to ground, positive current flowing into pin (unless otherwise specified) pos. parameter symbol limit values unit conditions min. typ. max. power supply 6.4.1 on-state resistance r ds(on) ? 8 10 m i d = 20 a; v in = high; v s = 10 v; t j = 25 c ? 14 18 m i d = 20 a; v in = high; v s = 10 v; t j = 150 c 6.4.2 nominal load current i dnom 7.8 9.7 ? a 1) v on = 0.5 v; t a = 85 c smd 2) ; v in = 5.0 v; v s 10 v; t j < 150 c 6.4.3 iso load current i diso 33 41 ? a 1) v on = 0.5 v; t c = 85 c; v in = 5.0 v; v s 10 v; t j < 150 c 6.4.4 off state drain current i dss ? 6 12 a v bb = 32 v; v in = 0.0 v 6.4.5 ? 1 2 a 1) v bb = 13.5 v; v in = 0.0 v; t j = 85 c dynamic characteristics 6.4.6 turn-on delay t ond 20 75 110 s r l = 2.2 ; v bb = v s = 13.5 v 6.4.7 turn-on time t on 80 150 250 s r l = 2.2 ; v bb = v s = 13.5 v 6.4.8 turn-off delay t offd 20 75 110 s r l = 2.2 ; v bb = v s = 13.5 v 6.4.9 turn-off time t off 80 150 250 s r l = 2.2 ; v bb = v s = 13.5 v 6.4.10 slew rate on -d v d /d t on 0.1 0.3 0.7 v/ s r l = 2.2 ; v bb = v s = 13.5 v 6.4.11 slew rate off d v d /d t off 0.1 0.3 0.7 v/ s r l = 2.2 ; v bb = v s = 13.5 v 6.4.12 slew rate during edge shaping |di/dt| slow ? 0.04 0.07 a/ s 1) r l = 2.2 v bb = v s = 13.5 v; ohmic load
datasheet 21 rev. 1.1, 2008-02-28 smart low side power switch hitfet - BTS3160D power stage 6.4.13 slew rate between edge shaping |di/dt| fast ? ? 0.3 a/ s 1) r l = 2.2 v bb = v s = 13.5 v; ohmic load 6.4.14 fault signal delay t dfault ? 4 10 s 1) inverse diode 6.4.15 inverse diode forward voltage v d -0.3 -1.0 -1.5 v i d = -12 a; v s = 0 v; v in = 0.0 v 1) not subject to production test. 2) device on 50 mm 50 mm 1.5 mm epoxy pcb fr4 with 6 cm 2 (one layer, 70 m thick) copper area for drain connection. pcb mounted vertical without blown air. v s = 6 v to 30 v, t j = -40 c to +150 c all voltages with respect to ground, positive current flowing into pin (unless otherwise specified) pos. parameter symbol limit values unit conditions min. typ. max.
datasheet 22 rev. 1.1, 2008-02-28 smart low side power switch hitfet - BTS3160D protection functions 7 protection functions the device provides embedded protection functions ag ainst over temperature, over load and short circuit. note: integrated protection functions are designed to prevent ic destruction under fault conditions described in the data sheet. fault conditions are cons idered as ?outside? normal operation. 7.1 thermal protection the device is protected against over temperature resulting due to overload and / or bad cooling conditions. the BTS3160D has a thermal latch function. the thermal latch is reset by in-low signal. see figure 18 for the latch behavior. the diagram naming refers to figure 8 in low high t thermal shutdown di low high t t t j t jsd i in i innom t 0 i infault ? t jsd t dfault thermal_fault_latch.emf figure 18 status feedback via input current at over temperature 7.2 over voltage protection the BTS3160D is equipped with a voltage clamp mechanism that keeps the drain-source voltage v d at a certain level. this stage is also used for inductive clamping. see ?inductive output clamp? on page 18 for details. 7.3 short circuit protection the condition short circuit is an overload condition of the device. dependent on the short circuit resistance the current increase is more or less steep. in condition of hi gh ohmic short the device heats up and the turn off is due to over temperature. in condition low ohmic short the devic e turns off on a threshold current level before the over temperature condition is detected. in order to allow short current spikes, the turn off occurs with the delay time t dsc . figure 19 shows the behavior mentioned above. in this exam ple the short circuit a lways occurs after the device has switched on under normal l oad condition - short circuit type 2. th e definitions of voltages and currents are in respect to figure 8 . the behavior of v di also depends on r in .
short circuit type 2.emf v do low high overload v di low high i d i dsc i in i innom 0 i infault short circuit t dsc i dnom t dfault t dfault t t t t thermal shutdown short circuit shut off short spike t dsc datasheet 23 rev. 1.1, 2008-02-28 smart low side power switch hitfet - BTS3160D protection functions figure 19 short circuit during on state, typical behavior for ohmic loads in low high therm al shutdown di low high i d i dsc i in i innom 0 i infault short circuit type 1.emf i dnom t dfault t dfault short circuit shut off t t t t t dsc t dsc short spike figure 20 turn on into existing short circuit, typical behavior for ohmic loads the case when the device switches on into an existi ng short circuit - short circuit type 1- is shown in figure 20 .
datasheet 24 rev. 1.1, 2008-02-28 smart low side power switch hitfet - BTS3160D protection functions the test setup for short circui t characterization is shown in figure 21 . the BTS3160D is a low side switch. therefore it can be assumed that the micro controller and device gnd connection have a low impedance. the v s voltage needs to be stabilized to ensure the protection features. in application this is often already covered from the module standard circuits. gnd drain s e tu p _ s h o r t_ c ir c u it.e mf bts3160 gnd v bb r sc l sc i d contr ol circuit in v s vcc 5v r in figure 21 test setup for short circuit characterization test
datasheet 25 rev. 1.1, 2008-02-28 smart low side power switch hitfet - BTS3160D protection functions 7.4 electrical charact eristics protection v s = 6 v to 30 v, t j = -40 t jsd 150 1) not subject to production test, specified by design. 175 1) ? v s = 6.0 v thermal hysteresis ? t jsd ? 10 ? k 1) v s = 6.0 v drain source clamp voltage v daz 40 44 ? v i d = 10 ma; v s = 0.0 v; v in = 0.0 v ? 45 49 v i d = 8 a; v s = 0.0 v; v in = 0.0 v short circuit shutdown current for max. t dsc i dsc 70 100 130 a short circuit shutdown delay t dsc 1 4 8 i d > i d(sc) , v s
datasheet 26 rev. 1.1, 2008-02-28 smart low side power switch hitfet - BTS3160D application information 8 application information note: the following information is given as a hint for the implementation of the device only and shall not be regarded as a description or warranty of a certain functionality, condition or quality of the device. 8.1 dimensioning of serial resistor at in pin in order to use the digital feedback function of the device, there is serial resistor necessary between the in pin and the driver (micro controller) to calculate the value of this serial resistor on the input pin three device conditions as well as the driver (micro controller) abilities needs to be taken into account. the driver must be capable of driving at least ifault_onth to avoid immediate restart figure 22 shows the circuit used for reading out the digital status. fault_rin.emf in/fault do di i do i in r in 1.0ma : 3.0ma 20a : 100a fault information m icr ocontroller BTS3160D v rin gnd v do v di gnd v cc v s gnd v cc v bb figure 22 circuitry to readout fault information note: this is a very simplified example of an application ci rcuit. the function must be verified in the real application. conditions to be meet by the circuitry: ? during normal operation v in must be higher than v inh,min to switch on. ? during fault condition the ma x. capability of the driver (micro controller) must not be exceeded and the logic low level at di must be ensured by a voltage drop over the serial resistor r in while the device fault current is flowing. ? during fault state the device keeps prot ection active as long as it can sink more than the threshold current i fault_onth . in case the device can not sink this current, it resets the protection and waits for the next input high signal. so to avoid an unintentional switch on/off be havior, the input current must be above this threshold.
datasheet 27 rev. 1.1, 2008-02-28 smart low side power switch hitfet - BTS3160D application information conditions in formulas: 1. c output current,min > c high ,max / r in > i fault_onth with coutput current,min referr ing to the micro controller maxi mum output curr ent capability. with chigh,max referring to the maximal high outp ut voltage of the micro controller driving stage. this condition is valid during status feedback operation mode. 2. v in = c high ,min - ( r in * i in ,max) > v inh ,min with chigh,min referring to the minimal high output voltage of the micro controller driving stage. this condition is valid during normal operation mode 3. c high ,max - ( r in * i in -fault,min) < c(di)l,max with c(di)l,max referring to the maximum logic low voltage of the micro controller input stage the maximum current is either defined by the BTS3160D or the micro controller driving stage this condition is valid during status feedback operation mode 4. i in -fault = c high,min / r in > i fault_onth with c high,min referring to the minimum logic low voltage of the micro controller output stage the BTS3160D is resetting the fault latch, if the current on in pin goes below i fault_onth. this condition is valid during status feedback operation mode out of this conditions the minimum and ma ximum resistor values can be calculated. for a typical 5v micro controller with outp ut current capability in the 3 ma range, a resistor range from 7.5 k down to 4.5 k can be used. for a typical 3.3v micro controller a range from 4.6 k to 2.5 k is suitable. we recommend 3k3 for a 3.3v c and 5k6 for a 5v c to achieve a logic low signal. 8.2 further application information ? for further information you may contact http://www.infineon.com/hitfet
datasheet 28 rev. 1.1, 2008-02-28 smart low side power switch hitfet - BTS3160D package outlines 9 package outlines 1) -0.05 +0.15 6.5 -0.10 +0.05 2.3 -0.04 +0.08 0.5 -0.01 +0.20 0.9 (5) -0.2 6.22 a -0.04 +0.08 0.5 1.14 4.56 a 0.25 m b 0.8 0.15 5 x 0.6 0.1 1 0.1 9.98 0.5 b all metal surfaces tin plated, except area of cut. 1) includes mold flashes on each side. 5.7 max. 0.1 b 0.15 max. per side 0.51 min. 0...0.15 (4.24) pg-to252-5-13-po v0.1 figure 23 pg-to-252-5-13 (plastic green thin outline package) green product (rohs compliant) to meet the world-wide customer requirements for environmentally friendly products and to be compliant with government regulations the device is available as a green product. gree n products are rohs-compliant (i.e pb-free finish on leads and suitable for pb-free soldering according to ipc/jedec j-std-020). you can find all of our packages, so rts of packing and others in our infineon internet page ?products?: http://www.infineon.com/products . dimensions in mm
datasheet 29 rev. 1.1, 2008-02-28 smart low side power switch hitfet - BTS3160D revision history 10 revision history version date changes rev. 1.1 2008-02-28 released automotive green and robust version changed package naming to green package, updated package drawing updated package drawing and description text on overview page added rohs logo to overview page and added green feature to list rev. 1.0 2007-08-14 first released datasheet revision
edition 2008-02-28 published by infineon technologies ag 81726 munich, germany ? 2008 infineon technologies ag all rights reserved. legal disclaimer the information given in this docu ment shall in no event be regarded as a guarantee of conditions or characteristics. with respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, infine on technologies hereby disclaims any and all warranties and liabilities of any kind, including witho ut limitation, warranties of non-infrin gement of intellectua l property rights of any third party. information for further information on technology, delivery terms and conditions and prices, please contact the nearest infineon technologies office ( www.infineon.com ). warnings due to technical requirements, components may contain dangerous substances. for information on the types in question, please contact the nearest infineon technologies office. infineon technologies compon ents may be used in life-su pport devices or systems only with the express written approval of infineon technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safe ty or effectiveness of that de vice or system. life support devices or systems are intended to be implanted in the hu man body or to support an d/or maintain and sustain and/or protect human life. if they fail, it is reasonable to assume that the health of the user or other persons may be endangered.

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